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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah,
D. J. Carrad
,
P. Krogstrup
,
J. Nygard
, A. P. Micolich
Condensed Matter Physics
4
Citations (Scopus)
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Engineering & Materials Science
III-V semiconductors
100%
Nanowires
74%
Electrolytes
58%
Polymers
44%
Doping (additives)
40%
Hot Temperature
28%
MOSFET devices
28%
Transistors
20%
Solid electrolytes
17%
Contact resistance
13%
Oxides
10%
Metals
7%
Temperature
4%
Physics & Astronomy
electrolytes
49%
nanowires
48%
polymers
35%
metal oxide semiconductors
24%
transistors
19%
field effect transistors
18%
solid electrolytes
14%
contact resistance
12%
metal oxides
11%
performance
10%
routes
9%
room temperature
6%
Chemical Compounds
Nanowire
52%
Semiconductor
45%
Metal Oxide
30%
Field Effect
23%
Contact Resistance
15%
Solid Electrolyte
12%
Application
7%
Ambient Reaction Temperature
6%