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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah,
D. J. Carrad
,
P. Krogstrup
,
J. Nygard
, A. P. Micolich
Condensed Matter Physics
4
Citations (Scopus)
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Engineering & Materials Science
Contact resistance
13%
Doping (additives)
40%
Electrolytes
58%
Hot Temperature
28%
III-V semiconductors
100%
Metals
7%
MOSFET devices
28%
Nanowires
74%
Oxides
10%
Polymers
44%
Solid electrolytes
17%
Temperature
4%
Transistors
20%
Physics & Astronomy
contact resistance
12%
electrolytes
49%
field effect transistors
18%
metal oxide semiconductors
24%
metal oxides
11%
nanowires
48%
performance
10%
polymers
35%
room temperature
6%
routes
9%
solid electrolytes
14%
transistors
19%
Chemical Compounds
Ambient Reaction Temperature
6%
Application
7%
Contact Resistance
15%
Field Effect
23%
Metal Oxide
30%
Nanowire
52%
Semiconductor
45%
Solid Electrolyte
12%