Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

A. R. Ullah; D. J. Carrad; P. Krogstrup; J. Nygard; A. P. Micolich

doi:10.1103/PhysRevMaterials.2.025601

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

A. R. Ullah, D. J. Carrad, P. Krogstrup, J. Nygard, A. P. Micolich

Condensed Matter Physics

4 Citations (Scopus)

Original language	English
Article number	025601
Journal	Physical Review Materials
Volume	2
Issue number	2
Number of pages	5
ISSN	2475-9953
DOIs	https://doi.org/10.1103/PhysRevMaterials.2.025601
Publication status	Published - 5 Feb 2018

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title = "Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes",

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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

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