Billede af Jesper Nygård
  • Universitetsparken 5, 2100 København Ø

19982019

Publikationer pr. år

Netværk

C. Schoenenberger

  • Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

Ekstern person

Esther Alarcon-Llado

  • Swiss Federal Institute of Technology Lausanne
  • AMOLF

Ekstern person

Kimberly A Dick

  • Lund University

Ekstern person

S. Csonka

  • Budapest University of Technology and Economics, Department of Physics, 1111 Budapest, Budafoki út 6, Hungary

Ekstern person

Anna Fontcuberta i Morral

  • Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne

Ekstern person

P. Makk

  • Budapest University of Technology and Economics

Ekstern person

Anna Fontcuberta i Morral

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland
  • Swiss Federal Institute of Technology Lausanne

Ekstern person

Poul Erik Hansen

  • DFM - Dansk Fundamental Metrologi A/S

Ekstern person

Gábor Fábián

  • Departement of Physics, University of Basel

Ekstern person

Mads Brandbyge

  • Danmarks Tekniske Universitet

Ekstern person

Martin H Sørensen

  • Danmarks Tekniske Universitet

Ekstern person

C. Schönenberger

  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Ekstern person

A. Geresdi

  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Ekstern person

S.A. Jensen

  • Niels Bohr Institutet, Nano Science Center, Københavns Universitet

Ekstern person

Z. Hajnal

  • Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary

Ekstern person

P.R. Willmott

  • Paul Scherrer Institute

Ekstern person

Rui Wang

  • National Center for Nanoscience and Technology

Ekstern person

Erdmann Spiecker

  • Christian-Albrecht- University Kiel

Ekstern person

Dmitry, I Pikulin

  • University of California, Santa Barbara

Ekstern person

C. Colombo

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Ekstern person

L.P. Hansen

  • Niels Bohr Institutet, Nano Science Center, Københavns Universitet

Ekstern person

Kenji Watanabe

  • Danish Cancer Society

Ekstern person

András Pályi

  • Department of Physics, University of Konstanz, D-78457 Konstanz, Germany

Ekstern person

Rok Zitko

  • Jožef Stefan Institute

Ekstern person

D.V. Christensen

  • Technical University of Denmark, Risø Campus

Ekstern person

K.C.Y. Huang

  • Stanford University

Ekstern person

Mark L. Brongersma

  • Stanford University

Ekstern person

Martin Heiss

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland

Ekstern person

F.M. Qu

  • Chinese Academy of Sciences

Ekstern person

Jan Friis Jørgensen

  • Aarhus Universitet

Ekstern person

J. Dufouleur

  • IFW Dresden

Ekstern person

J. Volk

  • Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary

Ekstern person

Stig Helmer Jensen

  • University of Copenhagen

Ekstern person

L. Hofsletter

  • Univ Basel, Dept Phys, CH-4056 Basel, Switzerland

Ekstern person

W. Chang

  • Harvard University

Ekstern person

S. Curiotto

  • RISØ DTU. Materials Research Department, Roskilde

Ekstern person

M. Murray

  • Texas A&M University

Ekstern person

Lukás István Endre

  • Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary

Ekstern person

Mikkel Stolborg

  • Nano-Science Center, Københavns Universitet

Ekstern person

Pierre Blanc

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

Y.Z. Chen

  • Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark

Ekstern person

P. Staszel

  • University of Copenhagen

Ekstern person

D. Beavis

  • Brookhaven National Laboratory

Ekstern person

Stephan Daniel Bouman

  • Novo Nordisk A/S (Biz)

Ekstern person

Jingdong Zhang

  • Technical University of Denmark

Ekstern person

Anna Dalmau Mallorqui

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

Nini Pryds

  • Electrofunctional materials

Ekstern person

Xiaohui Qiu

  • National Center for Nanoscience and Technology

Ekstern person

T. S. Tveter

  • University of Oslo

Ekstern person

W. Zhang

  • Tecnical University of Denmark, Risø Campus

Ekstern person

K. Hagel

  • Texas A&M University

Ekstern person

Hu Wenping

  • Chinese Academy of Science

Ekstern person

C. Chasman

  • Brookhaven National Laboratory

Ekstern person

Leonid I. Glazman

  • Unvi. Minnesota
  • Yale University

Ekstern person

V.E. Manucharyan

  • Society of Fellows, Harvard University, Cambridge, Massachusetts 02138, USA

Ekstern person

F. Trier

  • Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark

Ekstern person

Ilja Czolkos

  • Danmarks Tekniske Universitet

Ekstern person

L. Lu

  • Chinese Academy of Sciences
  • Chiba University

Ekstern person

Michelle M. Jung

  • Harvard Medical School

Ekstern person

Thomas Hoeg-Jensen

  • Novo Nordisk A/S (Biz)

Ekstern person

Roman M. Lutchyn

  • University of California, Santa Barbara

Ekstern person

F. Badique

  • Institut de Science des Matériaux de Mulhouse (IS2M), CNRS UMR7361, Université de Haute-Alsace,15, rue Jean Starky, BP 2488, F-68057 Mulhouse cedex, France

Ekstern person

F. Trier

  • Technical University of Denmark, Risø Campus

Ekstern person

B. Budick

  • New York University

Ekstern person

A. Smith

  • Technical University of Denmark, Risø Campus

Ekstern person

G. Sáfrán

  • Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary

Ekstern person

Christian Engelbrekt

  • Technical University of Denmark

Ekstern person

Martin Hiess

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

R. Debbe

  • Brookhaven National Laboratory

Ekstern person

Christina Scheu

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

Ekstern person

J.R. Sun

  • Chinese Academy of Sciences

Ekstern person

A.P. Micolich

  • School of Physics, University of New South Wales, Sydney, New South Wales 2052

Ekstern person

M. Heiss

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Ekstern person

Trine Porsgaard

  • Danmarks Tekniske Universitet

Ekstern person

B.G. Shen

  • Chinese Academy of Sciences

Ekstern person

Huiyun Liu

  • Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

Ekstern person

Rajamani Lakshminayaranan

  • University of Southern California

Ekstern person

Carlo Colombo

  • Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne

Ekstern person

John D. Watson

  • Ontario Institute for Cancer Research

Ekstern person

Elisabetta Maria Fiordaliso

  • Danmarks Tekniske Universitet

Ekstern person

Takeshi Kasama

  • Center for Electron Nanoscopy
  • Technical University of Denmark

Ekstern person

AFI Fontcuberta

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

S. Csonka

  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Ekstern person

Samuel d'Hollosy

  • Departement of Physics, University of Basel

Ekstern person

Nico A. J. M. Sommerdijk

  • The Technical University of Endhoven

Ekstern person

D.V. Christensen

  • Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark

Ekstern person

Manuela Zoonens

  • Institut de Biologie Physico-Chimique, UMR 7099, CNRS/Université Paris-7, 13 Rue Pierre et Marie Curie, F-75005 Paris, France

Ekstern person

R. Giraud

  • IFW Dresden

Ekstern person

J. Natowitz

  • Texas A&M University

Ekstern person

Yunqi Liu

  • Chinese Academy of Sciences

Ekstern person

Federico Matteini

  • Swiss Federal Institute of Technology Lausanne

Ekstern person

L. Hofstetter

  • Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

Ekstern person

Andreas Baumgartner

  • Departement of Physics, University of Basel

Ekstern person

Christian Schöenberger

  • Departement of Physics, University of Basel

Ekstern person

A.F. i Morral

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Ekstern person

Erika Mühlbauer

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

Ekstern person

N.H. Andersen

  • Technical University of Denmark

Ekstern person

Pengyu Fan

  • Stanford University

Ekstern person

David Henry Cobden

  • University of Warwick. Department of Physics

Ekstern person

Wenping Hu

  • Chinese Academy of Sciences

Ekstern person

Mads Brandbyge

  • Department of Micro- and Nanotechnology, Technical University of Denmark

Ekstern person

C. B. Sørensen

  • Niels Bohr Institutet

Ekstern person

Aske Nørskov Gejl

  • Kemisk Institut, Københavns Universitet

Ekstern person

David Henry Cobden

  • University of Washington. Department of physics

Ekstern person

Oliver Demichel

  • Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland

Ekstern person

Paul H.H. Bomans

  • The Technical University of Eindhoven

Ekstern person

C. B. Sørensen

  • Nano-Science Center, Niels Bohr Institute, University of Copenhagen

Ekstern person

Jun Yamasaki

  • EcoTopia Science Institute, Department of Quantum Engineering, Nagoya University, 464-8603, Japan

Ekstern person

M. L. Polianski

  • The Niels Bohr Institute, The Niels Bohr International Academy

Ekstern person

G. Fülöp

  • Budapest University of Technology and Economics, Department of Physics, 1111 Budapest, Budafoki út 6, Hungary

Ekstern person

Y.Z. Chen

  • Technical University of Denmark, Risø Campus

Ekstern person

K. Anselme

  • Institut de Science des Matériaux de Mulhouse (IS2M), CNRS UMR7361, Université de Haute-Alsace,15, rue Jean Starky, BP 2488, F-68057 Mulhouse cedex, France

Ekstern person

S. Csonka

  • Univ Basel, Dept Phys, CH-4056 Basel, Switzerland, Budapest Univ Technol & Econ, Dept Phys, H-1111 Budapest, Hungary

Ekstern person

B. Büchner

  • IFW Dresden

Ekstern person

Mats Jonson

  • Chalmers University of Technology

Ekstern person

Nina Rasmussen

  • Nano-Science Center, Københavns Universitet

Ekstern person

T. Ruelle

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Ekstern person

C. Besliu

  • University of Bucharest

Ekstern person

R. Erdélyi

  • Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary

Ekstern person

A. Smith

  • Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark

Ekstern person

Carlo Colombo

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

Sidse Annett Linderoth

  • AU Viden, Aarhus Universitet

Ekstern person

Tina S. Safaei

  • Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland

Ekstern person

A. Gasadei

  • Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Ekstern person

B. H. Samset

  • University of Oslo

Ekstern person

Sriam Venkatesan

  • Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German

Ekstern person