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Børge Svane Nielsen
- Niels Bohr Institutet, Eksperimentel subatomar fysik - Lektor emeritus
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S. d'Hollosy
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A. Baumgartner
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Lunjie Zeng
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David Henry Cobden
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J.R. Hauptmann
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A. R. Ullah
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G. Fueloep
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S. Csonka
- Budapest University of Technology and Economics, Department of Physics, 1111 Budapest, Budafoki út 6, Hungary
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J. Borggreen
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A.P: Micolich
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Anna Fontcuberta i Morral
- Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne
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V. A. Guzenko
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L. Hofstetter
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Anna Fontcuberta i Morral
- Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland
- Swiss Federal Institute of Technology Lausanne
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Alicia Johansson
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Szabolcs Csonka
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H. Shtrikman
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Jorgen Garnaes
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David J. van Woerkom
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C. Schonenberger
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Francesca Amaduzzi
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C. Schönenberger
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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Gergo Fulop
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J. Arbiol
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Zoltan Scherubl
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Attila Geresdi
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Lasse Hojlund Thamdrup
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A. Geresdi
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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K. Muraki
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J. G. Gluschke
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Marc Monthioux
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Ludvig de Knoop
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Lars Samuelson
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Chris J. Palmstrom
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Nobuo Tanaka
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Huiyun Liu
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Janusz Sadowski
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C. Urbina
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Søren Lauridsen
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Z. Hajnal
- Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary
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Burak Ozdol
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A. Marton
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Balint Fulop
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I. Arsene
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J. H. Lee
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E. A. Laird
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Poul Erik Hansen
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M. H. Devoret
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Z. Majka
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Takahasi Masamitu
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Ane Jensen
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T. Jespersen
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C. Colombo
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Ilja Czolkos
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M. Heiss
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S. Naureen
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James Damon Carrad
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M Monthioux
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Gergely Zarand
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Martin Heiss
- Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland
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J. Volk
- Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary
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Poul Erik Hansen
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O. W. Enzing
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- Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary
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RI Shekter
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Anna F. Morral
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K. Deppert
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Y.Z. Chen
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark
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Carlo Colombo
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J.S. Yodh
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Liu Yunqi
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Jukka I. Vayrynen
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Anna Dalmau Mallorqui
- Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland
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K. Serniak
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Jørn Borggreen
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Sørensen Claus B.
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E. Uccelli...[et al.]
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Emanuele Uccelli
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Robert Pennington
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Martin Magnusson
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M. H. Madsen
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V.E. Manucharyan
- Society of Fellows, Harvard University, Cambridge, Massachusetts 02138, USA
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Hubert Hautmann
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F. Trier
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark
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D. Rohrich
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Leo P. Kouwenhoven
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Kozu Miwa
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S. Bekele
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R. A. Scheetz
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Brian Tarasinski
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F. Freitag
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Andrew M. Minor
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F. Badique
- Institut de Science des Matériaux de Mulhouse (IS2M), CNRS UMR7361, Université de Haute-Alsace,15, rue Jean Starky, BP 2488, F-68057 Mulhouse cedex, France
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M. Zaffalon
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M. R. Wegewijs
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Claes Thelander
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A.B. Mostert
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Theodor Nielsen
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Jukka P. Pekola
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G. Sáfrán
- Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary
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Per Rugaard Poulsen
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R. Popovitz-Biro
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Poul Erik Hansen
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B. S. Dwarakanath
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Wagner Jakob B.
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Christina Scheu
- Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German
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A.P. Micolich
- School of Physics, University of New South Wales, Sydney, New South Wales 2052
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M. Heiss
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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P.L. McEuen
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IV Krive
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et al.
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Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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Sebastian Smerat
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M.M. Andreasen
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Niklas Skold
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J. Bo Jensen
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Carlo Colombo
- Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne
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Michael Wimmer
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F. Rami
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C. B. Sørensen
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S. Oberholzer
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S. Schmaus
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O. Ristea
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G. Steele
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AFI Fontcuberta
- Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland
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Pierre Boher
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Morten H. Madsen
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P. Wölfle
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Morten Hannibal Madsen
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J.A Röhr
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Christoph Gammer
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S. Csonka
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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Jiwoong Park
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Laure Noé
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D.V. Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark
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Manuela Zoonens
- Institut de Biologie Physico-Chimique, UMR 7099, CNRS/Université Paris-7, 13 Rue Pierre et Marie Curie, F-75005 Paris, France
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M.C. Michel
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Hu Wen
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A. Levy Yeyati
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F. Dominguez
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Raffaello Ferone
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F. Meyer
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F. Videbaek
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G.J. de Lange
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M. Hays
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Jonas Johansson
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Borzoyeh Shojaei
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Elsa Mannila
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L. Hofstetter
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
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P. Caroff
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CM Marcus
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A. Kristensen
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P. San-Jose
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A.F. i Morral
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Erika Mühlbauer
- Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German
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F. Luthi
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Leo P. Kouwenhoven
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S. Lindal
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Takashi Taniguchi
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Frank Glas
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E. Russo-Averchi
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Phillip R. Willmott
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C.J. Burke
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Mads Brandbyge
- Department of Micro- and Nanotechnology, Technical University of Denmark
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C. E. Jørgensen
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M. F. Goffman
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Arne Vogelsang
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Marie-Aurélie Bruno
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A. Jipa
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Stephan D Bouman
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Mathieu Taupin
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C. Dickel
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Oliver Demichel
- Ecole Polytech Fed Lausanne, Lab Mate Semicond, CH-1015 Lausanne, Switzerland
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L. Michelet
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Jun Yamasaki
- EcoTopia Science Institute, Department of Quantum Engineering, Nagoya University, 464-8603, Japan
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Joachim E. Sestoft
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Maria de la Mata
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A. Jensen
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G. Fülöp
- Budapest University of Technology and Economics, Department of Physics, 1111 Budapest, Budafoki út 6, Hungary
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K. Anselme
- Institut de Science des Matériaux de Mulhouse (IS2M), CNRS UMR7361, Université de Haute-Alsace,15, rue Jean Starky, BP 2488, F-68057 Mulhouse cedex, France
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R. Aguado
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S. J. Sanders
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Morten H. Madsen
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S. Csonka
- Univ Basel, Dept Phys, CH-4056 Basel, Switzerland, Budapest Univ Technol & Econ, Dept Phys, H-1111 Budapest, Hungary
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A Rosch
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M. H. Madsen
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Gözde Tütüncüoǧlu
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T. Ruelle
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Eric M. Spanton
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R. Žitko
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R. Erdélyi
- Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest, Pusztaszeri út 59-67, Hungary
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M. Bockgrath
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E. J. Kim
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Nini Pryds
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L. P. Kouwenhoven
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F. Beuscher
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Gyorgy Frank
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A. Smith
- Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, DK-4000 Roskilde, Denmark
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Carlo Colombo
- Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland
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Jasper van Veen
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Tina S. Safaei
- Ecole Polytech Fed Lausanne, Lab Semicond Mat LMSC, Lausanne, Switzerland
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B. Braunecker
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C.B. Soerensen
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Laura Bojarskaite
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E. B. Johnson
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A. Gasadei
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Asmus Dohn
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R. Karabowicz
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R. Planeta
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Torsten Karzig
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Sriam Venkatesan
- Department of Chemistry and Center for NanoScience, Ludwig-Maximilians-University, Butenandstr. 11, 81377 Munich, German
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J.R. Morante
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