@article{97411b1386104fcc9b98f628a4c07d67,
title = "Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts",
keywords = "indium arsenide, nanowire, patterning, lithography, wet etch, quantum dot, galvanic",
author = "G. F{\"u}l{\"o}p and S. d'Hollosy and L. Hofstetter and A. Baumgartner and Jesper Nyg{\aa}rd and C. Sch{\"o}nenberger and S. Csonka",
note = "[QDev]",
year = "2016",
month = apr,
day = "5",
doi = "10.1088/0957-4484/27/19/195303",
language = "English",
volume = "27",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics Publishing Ltd",
number = "19",
}