Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

G. Fülöp; S. d'Hollosy; L. Hofstetter; A. Baumgartner; Jesper Nygård; C. Schönenberger; S. Csonka

doi:10.1088/0957-4484/27/19/195303

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

G. Fülöp, S. d'Hollosy, L. Hofstetter, A. Baumgartner, Jesper Nygård, C. Schönenberger, S. Csonka

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5 Citationer (Scopus)

Originalsprog	Engelsk
Artikelnummer	195303
Tidsskrift	Nanotechnology
Vol/bind	27
Udgave nummer	19
Antal sider	8
ISSN	0957-4484
DOI	https://doi.org/10.1088/0957-4484/27/19/195303
Status	Udgivet - 5 apr. 2016

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10.1088/0957-4484/27/19/195303

nano_27_19_195303(1)Forlagets udgivne version, 1,02 MB

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title = "Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts",

keywords = "indium arsenide, nanowire, patterning, lithography, wet etch, quantum dot, galvanic",

author = "G. F{\"u}l{\"o}p and S. d'Hollosy and L. Hofstetter and A. Baumgartner and Jesper Nyg{\aa}rd and C. Sch{\"o}nenberger and S. Csonka",

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doi = "10.1088/0957-4484/27/19/195303",

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TY - JOUR

T1 - Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

AU - Fülöp, G.

AU - d'Hollosy, S.

AU - Hofstetter, L.

AU - Baumgartner, A.

AU - Nygård, Jesper

AU - Schönenberger, C.

AU - Csonka, S.

N1 - [QDev]

PY - 2016/4/5

Y1 - 2016/4/5

KW - indium arsenide

KW - nanowire

KW - patterning

KW - lithography

KW - wet etch

KW - quantum dot

KW - galvanic

U2 - 10.1088/0957-4484/27/19/195303

DO - 10.1088/0957-4484/27/19/195303

M3 - Journal article

C2 - 27040175

SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 19

M1 - 195303

ER -

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

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