Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

TY - JOUR

T1 - Structure of the Buried Metal-Molecule Interface in Organic Thin Film Devices

AU - Hansen, Christian Rein

AU - Sørensen, Thomas Just

AU - Glyvradal, Magni

AU - Larsen, Jacob

AU - Eisenhardt, Sara H.

AU - Bjørnholm, Thomas

AU - Nielsen, Martin Meedom

AU - Feidenhans'l, Robert Krarup

AU - Laursen, Bo Wegge

PY - 2009

Y1 - 2009

N2 - By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum. By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers (5 nm) is completely destroyed due to the metal deposition.

AB - By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir-Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum. By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal-molecule interface is obtained. We find that the organized structure of the two topmost LB layers (5 nm) is completely destroyed due to the metal deposition.

U2 - 10.1021/nl803393m

DO - 10.1021/nl803393m

M3 - Journal article

C2 - 19199753

SN - 1530-6984

VL - 9

SP - 1052

EP - 1057

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -