Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure

TY - JOUR

T1 - Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure

AU - Lara-Avila, Samuel

AU - Moth-Poulsen, Kasper

AU - Yakimova, Rositza

AU - Bjørnholm, Thomas

AU - Fal'ko, Vladimir

AU - Tzalenchuk, Alexander

AU - Kubatkin, Sergey

PY - 2011/2/15

Y1 - 2011/2/15

N2 - A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

AB - A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

U2 - 10.1002/adma.201003993

DO - 10.1002/adma.201003993

M3 - Letter

C2 - 21328484

SN - 0935-9648

VL - 23

SP - 878

EP - 882

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -