Abstract
A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
Originalsprog | Engelsk |
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Tidsskrift | Advanced Materials |
Vol/bind | 23 |
Udgave nummer | 7 |
Sider (fra-til) | 878-882 |
Antal sider | 5 |
ISSN | 0935-9648 |
DOI | |
Status | Udgivet - 15 feb. 2011 |