Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

A. R. Ullah; D. J. Carrad; P. Krogstrup; J. Nygard; A. P. Micolich

doi:10.1103/PhysRevMaterials.2.025601

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

A. R. Ullah, D. J. Carrad, P. Krogstrup, J. Nygard, A. P. Micolich

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4 Citationer (Scopus)

Originalsprog	Engelsk
Artikelnummer	025601
Tidsskrift	Physical Review Materials
Vol/bind	2
Udgave nummer	2
Antal sider	5
ISSN	2475-9953
DOI	https://doi.org/10.1103/PhysRevMaterials.2.025601
Status	Udgivet - 5 feb. 2018

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10.1103/PhysRevMaterials.2.025601

PhysRevMaterials.2.025601Forlagets udgivne version, 569 KB

https://arxiv.org/pdf/1710.06950.pdfLicens: Andet

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Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

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