Low temperature transport in p-doped InAs nanowires

Shivendra Upadhyay; Thomas Sand Jespersen; Morten Hannibal Madsen; Peter Krogstrup; Jesper Nygård

doi:10.1063/1.4825275

Low temperature transport in p-doped InAs nanowires

Shivendra Upadhyay, Thomas Sand Jespersen, Morten Hannibal Madsen, Peter Krogstrup, Jesper Nygård

Condensed Matter Physics

5 Citations (Scopus)

Abstract

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

Original language	English
Article number	162104
Journal	Applied Physics Letters
Volume	103
Issue number	16
Pages (from-to)	.
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4825275
Publication status	Published - 14 Oct 2013

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Upadhyay, S., Jespersen, T. S., Madsen, M. H., Krogstrup, P., & Nygård, J. (2013). Low temperature transport in p-doped InAs nanowires. Applied Physics Letters, 103(16), . Article 162104. https://doi.org/10.1063/1.4825275

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abstract = "We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.",

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N2 - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

AB - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

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Low temperature transport in p-doped InAs nanowires

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