Low temperature transport in p-doped InAs nanowires

TY - JOUR

T1 - Low temperature transport in p-doped InAs nanowires

AU - Upadhyay, Shivendra

AU - Jespersen, Thomas Sand

AU - Madsen, Morten Hannibal

AU - Krogstrup, Peter

AU - Nygård, Jesper

PY - 2013/10/14

Y1 - 2013/10/14

N2 - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

AB - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

U2 - 10.1063/1.4825275

DO - 10.1063/1.4825275

M3 - Journal article

SN - 0003-6951

VL - 103

SP - .

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162104

ER -