Hole spin coherence in a Ge/Si heterostructure nanowire

TY - JOUR

T1 - Hole spin coherence in a Ge/Si heterostructure nanowire

AU - Higginbotham, Andrew P

AU - Larsen, Thorvald Wadum

AU - Yao, Jun

AU - Yan, Hao

AU - Lieber, Charles M

AU - Marcus, Charles M

AU - Kuemmeth, Ferdinand

N1 - Preprint available at http://arxiv.org/abs/1403.2093.

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

AB - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

U2 - 10.1021/nl501242b

DO - 10.1021/nl501242b

M3 - Journal article

C2 - 24797219

SN - 1530-6984

VL - 14

JO - Nano Letters

JF - Nano Letters

IS - 3582

M1 - 3582-3586

ER -