g-factor anisotropy in nanowire-based InAs quantum dots

Samuel d'Hollosy, Gábor Fábián, Andreas Baumgartner, Jesper Nygård, Christian Schöenberger

9 Citations (Scopus)

Abstract

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

Original languageEnglish
Article number359
JournalA I P Conference Proceedings
Volume1566
ISSN1551-7616
Publication statusPublished - 29 Jul 2013

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