g-factor anisotropy in nanowire-based InAs quantum dots

Samuel d'Hollosy; Gábor Fábián; Andreas Baumgartner; Jesper Nygård; Christian Schöenberger

g-factor anisotropy in nanowire-based InAs quantum dots

Samuel d'Hollosy, Gábor Fábián, Andreas Baumgartner, Jesper Nygård, Christian Schöenberger

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9 Citationer (Scopus)

Abstract

The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

Originalsprog	Engelsk
Artikelnummer	359
Tidsskrift	A I P Conference Proceedings
Vol/bind	1566
ISSN	1551-7616
Status	Udgivet - 29 jul. 2013

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http://dx.doi.org/10.1063/1.4848434

Citationsformater

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title = "g-factor anisotropy in nanowire-based InAs quantum dots",

abstract = "The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.",

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T1 - g-factor anisotropy in nanowire-based InAs quantum dots

AU - d'Hollosy, Samuel

AU - Fábián, Gábor

AU - Baumgartner, Andreas

AU - Nygård, Jesper

AU - Schöenberger, Christian

PY - 2013/7/29

Y1 - 2013/7/29

N2 - The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

AB - The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

M3 - Conference article

SN - 1551-7616

VL - 1566

JO - A I P Conference Proceedings

JF - A I P Conference Proceedings

M1 - 359

ER -

g-factor anisotropy in nanowire-based InAs quantum dots

Abstract

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