Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.

Tomas Stankevic; Emelie Kristin Margareta Hilner; F. Seiboth; Rafal Ciechonski; Giuliano Vescovi; Olga Kryliouk; Ulf Johansson; Lars Samuelsen; Gred Wellenreuther; Gerald Falkenberg; Robert Krarup Feidenhans'l; Anders Mikkelsen

doi:10.1021/acsnano.5b01291

Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.

Tomas Stankevic, Emelie Kristin Margareta Hilner, F. Seiboth, Rafal Ciechonski, Giuliano Vescovi, Olga Kryliouk, Ulf Johansson, Lars Samuelsen, Gred Wellenreuther, Gerald Falkenberg, Robert Krarup Feidenhans'l, Anders Mikkelsen

22 Citations (Scopus)

Abstract

X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.

Original language	English
Journal	A C S Nano
Volume	9
Issue number	7
Pages (from-to)	6978-6984
ISSN	1936-0851
DOIs	https://doi.org/10.1021/acsnano.5b01291
Publication status	Published - 28 Jul 2015

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@article{14351750af194c5a9c5c28f026394ff5,

title = "Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.",

abstract = "X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.",

author = "Tomas Stankevic and Hilner, {Emelie Kristin Margareta} and F. Seiboth and Rafal Ciechonski and Giuliano Vescovi and Olga Kryliouk and Ulf Johansson and Lars Samuelsen and Gred Wellenreuther and Gerald Falkenberg and Feidenhans'l, {Robert Krarup} and Anders Mikkelsen",

year = "2015",

month = jul,

day = "28",

doi = "10.1021/acsnano.5b01291",

language = "English",

volume = "9",

pages = "6978--6984",

journal = "A C S Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.

AU - Stankevic, Tomas

AU - Hilner, Emelie Kristin Margareta

AU - Seiboth, F.

AU - Ciechonski, Rafal

AU - Vescovi, Giuliano

AU - Kryliouk, Olga

AU - Johansson, Ulf

AU - Samuelsen, Lars

AU - Wellenreuther, Gred

AU - Falkenberg, Gerald

AU - Feidenhans'l, Robert Krarup

AU - Mikkelsen, Anders

PY - 2015/7/28

Y1 - 2015/7/28

N2 - X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.

AB - X-ray nanobeams are unique nondestructive probes that allow direct measurements of the nanoscale strain distribution and composition inside the micrometer thick layered structures that are found in most electronic device architectures. However, the method is usually extremely time-consuming, and as a result, data sets are often constrained to a few or even single objects. Here we demonstrate that by special design of a nanofocused X-ray beam diffraction experiment we can (in a single 2D scan with no sample rotation) measure the individual strain and composition profiles of many structures in an array of upright standing nanowires. We make use of the observation that in the generic nanowire device configuration, which is found in high-speed transistors, solar cells, and light-emitting diodes, each wire exhibits very small degrees of random tilts and twists toward the substrate. Although the tilt and twist are very small, they give a new contrast mechanism between different wires. In the present case, we image complex nanowires for nanoLED fabrication and compare to theoretical simulations, demonstrating that this fast method is suitable for real nanostructured devices.

U2 - 10.1021/acsnano.5b01291

DO - 10.1021/acsnano.5b01291

M3 - Journal article

C2 - 26090689

SN - 1936-0851

VL - 9

SP - 6978

EP - 6984

JO - A C S Nano

JF - A C S Nano

IS - 7

ER -

Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X-ray Beams.

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