Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager; Claus Birger Sørensen; Martin Aagesen; Jesper Nygård; Robert Krarup Feidenhans'l; P.R. Willmott

doi:10.1063/1.2769401

Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager, Claus Birger Sørensen, Martin Aagesen, Jesper Nygård, Robert Krarup Feidenhans'l, P.R. Willmott

45 Citations (Scopus)

Original language	English
Journal	Applied Physics Letters
Volume	91
Issue number	8
Pages (from-to)	083106
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2769401
Publication status	Published - 22 Aug 2007

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10.1063/1.2769401

Cite this

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title = "Facet structure of GaAs nanowires grown by molecular beam epitaxy",

author = "Mariager, {Simon Oddsson} and S{\o}rensen, {Claus Birger} and Martin Aagesen and Jesper Nyg{\aa}rd and Feidenhans'l, {Robert Krarup} and P.R. Willmott",

year = "2007",

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doi = "10.1063/1.2769401",

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journal = "Applied Physics Letters",

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AU - Mariager, Simon Oddsson

AU - Sørensen, Claus Birger

AU - Aagesen, Martin

AU - Nygård, Jesper

AU - Feidenhans'l, Robert Krarup

AU - Willmott, P.R.

PY - 2007/8/22

Y1 - 2007/8/22

U2 - 10.1063/1.2769401

DO - 10.1063/1.2769401

M3 - Journal article

SN - 0003-6951

VL - 91

SP - 083106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

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