Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager; Claus Birger Sørensen; Martin Aagesen; Jesper Nygård; Robert Krarup Feidenhans'l; P.R. Willmott

doi:10.1063/1.2769401

Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager, Claus Birger Sørensen, Martin Aagesen, Jesper Nygård, Robert Krarup Feidenhans'l, P.R. Willmott

45 Citationer (Scopus)

Originalsprog	Engelsk
Tidsskrift	Applied Physics Letters
Vol/bind	91
Udgave nummer	8
Sider (fra-til)	083106
ISSN	0003-6951
DOI	https://doi.org/10.1063/1.2769401
Status	Udgivet - 22 aug. 2007

Adgang til dokumentet

10.1063/1.2769401

Citationsformater

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title = "Facet structure of GaAs nanowires grown by molecular beam epitaxy",

author = "Mariager, {Simon Oddsson} and S{\o}rensen, {Claus Birger} and Martin Aagesen and Jesper Nyg{\aa}rd and Feidenhans'l, {Robert Krarup} and P.R. Willmott",

year = "2007",

month = aug,

day = "22",

doi = "10.1063/1.2769401",

language = "English",

volume = "91",

pages = "083106",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Facet structure of GaAs nanowires grown by molecular beam epitaxy

AU - Mariager, Simon Oddsson

AU - Sørensen, Claus Birger

AU - Aagesen, Martin

AU - Nygård, Jesper

AU - Feidenhans'l, Robert Krarup

AU - Willmott, P.R.

PY - 2007/8/22

Y1 - 2007/8/22

U2 - 10.1063/1.2769401

DO - 10.1063/1.2769401

M3 - Journal article

SN - 0003-6951

VL - 91

SP - 083106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -