Abstract
Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.
Original language | English |
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Journal | Solid State Communications |
Volume | 151 |
Issue number | 16 |
ISSN | 0038-1098 |
Publication status | Published - Aug 2011 |