Engineering and metrology of epitaxial graphene

Thomas Bjørnholm; Alexander Tzalenchuk; Samuel Lara-Avila; Karin  Cedergren; Mikael Syväjärvi; Rositza Yakimova; Olga Kazakova; T.J.B.M Janssen; Kasper Moth-Poulsen; Sergey Kopylov; Vladimir  Fal'ko; Sergey Kubatkin

Engineering and metrology of epitaxial graphene

Thomas Bjørnholm, Alexander Tzalenchuk, Samuel Lara-Avila, Karin Cedergren, Mikael Syväjärvi, Rositza Yakimova, Olga Kazakova, T.J.B.M Janssen, Kasper Moth-Poulsen, Sergey Kopylov, Vladimir Fal'ko, Sergey Kubatkin

Rektoratet

18 Citationer (Scopus)

Abstract

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.

Originalsprog	Engelsk
Tidsskrift	Solid State Communications
Vol/bind	151
Udgave nummer	16
ISSN	0038-1098
Status	Udgivet - aug. 2011

Citationsformater

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title = "Engineering and metrology of epitaxial graphene",

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author = "Thomas Bj{\o}rnholm and Alexander Tzalenchuk and Samuel Lara-Avila and Karin Cedergren and Mikael Syv{\"a}j{\"a}rvi and Rositza Yakimova and Olga Kazakova and T.J.B.M Janssen and Kasper Moth-Poulsen and Sergey Kopylov and Vladimir Fal'ko and Sergey Kubatkin",

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T1 - Engineering and metrology of epitaxial graphene

AU - Bjørnholm, Thomas

AU - Tzalenchuk, Alexander

AU - Lara-Avila, Samuel

AU - Cedergren, Karin

AU - Syväjärvi, Mikael

AU - Yakimova, Rositza

AU - Kazakova, Olga

AU - Janssen, T.J.B.M

AU - Moth-Poulsen, Kasper

AU - Kopylov, Sergey

AU - Fal'ko, Vladimir

AU - Kubatkin, Sergey

PY - 2011/8

Y1 - 2011/8

N2 - Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.

AB - Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.

M3 - Journal article

SN - 0038-1098

VL - 151

JO - Solid State Communications

JF - Solid State Communications

IS - 16

ER -

Engineering and metrology of epitaxial graphene

Abstract

Fingeraftryk

Citationsformater