Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012

Condensed Matter Physics

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Original language	English
Publication date	2 Jul 2012
Place of Publication	Bangalore, India
Publication status	Published - 2 Jul 2012

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The XXXIII Annual MeetingSubmitted manuscript, 376 KB

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@misc{176678c1b9944fec9849614e8dbe0d49,

title = "Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012",

author = "Erik Johnson",

year = "2012",

month = jul,

day = "2",

language = "English",

type = "Other",

}