Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012

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Originalsprog	Engelsk
Publikationsdato	2 jul. 2012
Udgivelsessted	Bangalore, India
Status	Udgivet - 2 jul. 2012

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The XXXIII Annual MeetingIndsendt manuskript, 376 KB

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@misc{176678c1b9944fec9849614e8dbe0d49,

title = "Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012",

author = "Erik Johnson",

year = "2012",

month = jul,

day = "2",

language = "English",

type = "Other",

}