@article{d7461270db3b11dd9473000ea68e967b,
title = "Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy",
abstract = "Udgivelsesdato: 2008",
keywords = "Faculty of Science, Nanowires, Semiconductor, Molecular Beam Epitaxy, Indium Arsenide",
author = "S{\o}rensen, {Brian Skov} and Martin Aagesen and S{\o}rensen, {Claus Birger} and Lindelof, {Poul Erik} and Martinez, {Karen Laurence} and Jesper Nyg{\aa}rd",
year = "2008",
doi = "10.1063/1.2821372",
language = "English",
volume = "92",
pages = "012119",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "1",
}