Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

Brian Skov Sørensen; Martin Aagesen; Claus Birger Sørensen; Poul Erik Lindelof; Karen Laurence Martinez; Jesper Nygård

doi:10.1063/1.2821372

Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

Brian Skov Sørensen, Martin Aagesen, Claus Birger Sørensen, Poul Erik Lindelof, Karen Laurence Martinez, Jesper Nygård

29 Citationer (Scopus)

Abstract

Udgivelsesdato: 2008

Originalsprog	Engelsk
Tidsskrift	Applied Physics Letters
Vol/bind	92
Udgave nummer	1
Sider (fra-til)	012119
ISSN	0003-6951
DOI	https://doi.org/10.1063/1.2821372
Status	Udgivet - 2008

Emneord

Det Natur- og Biovidenskabelige Fakultet

Adgang til dokumentet

10.1063/1.2821372

Citationsformater

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title = "Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy",

abstract = "Udgivelsesdato: 2008",

keywords = "Faculty of Science, Nanowires, Semiconductor, Molecular Beam Epitaxy, Indium Arsenide",

author = "S{\o}rensen, {Brian Skov} and Martin Aagesen and S{\o}rensen, {Claus Birger} and Lindelof, {Poul Erik} and Martinez, {Karen Laurence} and Jesper Nyg{\aa}rd",

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AU - Sørensen, Brian Skov

AU - Aagesen, Martin

AU - Sørensen, Claus Birger

AU - Lindelof, Poul Erik

AU - Martinez, Karen Laurence

AU - Nygård, Jesper

PY - 2008

Y1 - 2008

N2 - Udgivelsesdato: 2008

AB - Udgivelsesdato: 2008

KW - Faculty of Science

KW - Nanowires

KW - Semiconductor

KW - Molecular Beam Epitaxy

KW - Indium Arsenide

U2 - 10.1063/1.2821372

DO - 10.1063/1.2821372

M3 - Journal article

SN - 0003-6951

VL - 92

SP - 012119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -