@article{74747cd06e2d4851ba5bf6804a2f254a,
title = "Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors",
keywords = "nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment",
author = "Gluschke, {J. G.} and J. Seidl and Burke, {A. M.} and Lyttleton, {R. W.} and Carrad, {D. J.} and Ullah, {A. R.} and S. Fahlvik and S. Lehmann and H. Linke and Micolich, {A. P.}",
note = "[Qdev]",
year = "2019",
month = feb,
day = "8",
doi = "10.1088/1361-6528/aaf1e5",
language = "English",
volume = "30",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics Publishing Ltd",
number = "6",
}