Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

J. G. Gluschke; J. Seidl; A. M. Burke; R. W. Lyttleton; D. J. Carrad; A. R. Ullah; S. Fahlvik; S. Lehmann; H. Linke; A. P. Micolich

doi:10.1088/1361-6528/aaf1e5

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik, S. Lehmann, H. Linke, A. P. Micolich

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9 Citationer (Scopus)

Originalsprog	Engelsk
Artikelnummer	064001
Tidsskrift	Nanotechnology
Vol/bind	30
Udgave nummer	6
Antal sider	8
ISSN	0957-4484
DOI	https://doi.org/10.1088/1361-6528/aaf1e5
Status	Udgivet - 8 feb. 2019

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10.1088/1361-6528/aaf1e5

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@article{74747cd06e2d4851ba5bf6804a2f254a,

title = "Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors",

keywords = "nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment",

author = "Gluschke, {J. G.} and J. Seidl and Burke, {A. M.} and Lyttleton, {R. W.} and Carrad, {D. J.} and Ullah, {A. R.} and S. Fahlvik and S. Lehmann and H. Linke and Micolich, {A. P.}",

note = "[Qdev]",

year = "2019",

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day = "8",

doi = "10.1088/1361-6528/aaf1e5",

language = "English",

volume = "30",

journal = "Nanotechnology",

issn = "0957-4484",

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TY - JOUR

T1 - Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

AU - Gluschke, J. G.

AU - Seidl, J.

AU - Burke, A. M.

AU - Lyttleton, R. W.

AU - Carrad, D. J.

AU - Ullah, A. R.

AU - Fahlvik, S.

AU - Lehmann, S.

AU - Linke, H.

AU - Micolich, A. P.

N1 - [Qdev]

PY - 2019/2/8

Y1 - 2019/2/8

KW - nanowire

KW - gate-all-around

KW - GAA

KW - field-effect transistor

KW - nanowire alignment

U2 - 10.1088/1361-6528/aaf1e5

DO - 10.1088/1361-6528/aaf1e5

M3 - Journal article

C2 - 30523834

SN - 0957-4484

VL - 30

JO - Nanotechnology

JF - Nanotechnology

IS - 6

M1 - 064001

ER -

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

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