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Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates
E. Uccelli...[et al.], J. Arbiol, C. Magen,
Peter Krogstrup
,
Jesper Nygård
Faststoffysik
Niels Bohr Institutet - Afd.
113
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Keyphrases
Nanowire Growth
100%
Si Substrate
100%
Three-dimensional (3D)
100%
Multiple Order
100%
Self-catalyzed GaAs Nanowires
100%
Solar Splitting
50%
Nanowires
50%
Geometric Rule
50%
Branched Nanowires
50%
Nanowire Arrays
50%
GaAs Nanowires
50%
Growth Direction
50%
Polarization Analysis
50%
Nanowire Devices
50%
Array Devices
50%
Secondary Seed
50%
Water Splitting Devices
50%
Engineering
Si Substrate
100%
Nanowire
100%
Gallium Arsenide
100%
Initial Stage
20%
Nanowire Device
20%
Crystal Structure
20%
Water Splitting
20%
Material Science
Gallium Arsenide
100%
Nanowire
100%
Water Splitting
16%
Crystal Structure
16%