Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

TY - JOUR

T1 - Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

AU - Uccelli...[et al.], E.

AU - Arbiol, J.

AU - Magen, C.

AU - Krogstrup, Peter

AU - Nygård, Jesper

PY - 2011/9/14

Y1 - 2011/9/14

N2 - In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.

AB - In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.

U2 - 10.1021/nl201902w

DO - 10.1021/nl201902w

M3 - Journal article

SN - 1530-6984

VL - 11

SP - 3827

EP - 3832

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -