On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

B. Shojaei; A. C. C. Drachmann; M. Pendharkar; D. J. Pennachio; M. P. Echlin; P. G. Callahan; S. Kraemer; T. M. Pollock; C. M. Marcus; C. J. Palmstrøm

doi:10.1103/physrevb.94.245306

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

B. Shojaei, A. C. C. Drachmann, M. Pendharkar, D. J. Pennachio, M. P. Echlin, P. G. Callahan, S. Kraemer, T. M. Pollock, C. M. Marcus, C. J. Palmstrøm

Faststoffysik

Abstract

The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.

Originalsprog	Engelsk
Artikelnummer	245306
Tidsskrift	Physical Review B (Condensed Matter and Materials Physics)
ISSN	2469-9950
DOI	https://doi.org/10.1103/physrevb.94.245306
Status	Udgivet - 14 dec. 2016

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cond-mat.mtrl-sci

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10.1103/physrevb.94.245306

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Shojaei, B., Drachmann, A. C. C., Pendharkar, M., Pennachio, D. J., Echlin, M. P., Callahan, P. G., Kraemer, S., Pollock, T. M., Marcus, C. M., & Palmstrøm, C. J. (2016). On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers. Physical Review B (Condensed Matter and Materials Physics), [245306]. https://doi.org/10.1103/physrevb.94.245306

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abstract = "The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.",

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T1 - On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

AU - Shojaei, B.

AU - Drachmann, A. C. C.

AU - Pendharkar, M.

AU - Pennachio, D. J.

AU - Echlin, M. P.

AU - Callahan, P. G.

AU - Kraemer, S.

AU - Pollock, T. M.

AU - Marcus, C. M.

AU - Palmstrøm, C. J.

N1 - [Qdev]

PY - 2016/12/14

Y1 - 2016/12/14

N2 - The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.

AB - The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.

KW - cond-mat.mtrl-sci

U2 - 10.1103/physrevb.94.245306

DO - 10.1103/physrevb.94.245306

M3 - Journal article

SN - 2469-9950

JO - Physical Review B

JF - Physical Review B

M1 - 245306

ER -

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

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