Indium arsenide nanowire field-effect transistors for pH and biological sensing

TY - JOUR

T1 - Indium arsenide nanowire field-effect transistors for pH and biological sensing

AU - Upadhyay, Shivendra

AU - Frederiksen, Rune Schøneberg

AU - Lloret, Noemie Denise Carmen

AU - De Vico, Luca

AU - Krogstrup, Peter

AU - Jensen, Jan Halborg

AU - Martinez, Karen Laurence

AU - Nygård, Jesper

N1 - [QDev]

PY - 2014/5/19

Y1 - 2014/5/19

N2 - Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

AB - Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

U2 - 10.1063/1.4878659

DO - 10.1063/1.4878659

M3 - Journal article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203504

ER -