Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

Amirhasan Nourbakhsh; Mirco Cantoro; A. Klekachev; Francesca Clemente; B. Sorée; Marleen H. van der Veen; Tom Vosch; A. Stesmans; Bert Sels; Stefan De Gendt

doi:10.1021/jp910085n

Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

Amirhasan Nourbakhsh, Mirco Cantoro, A. Klekachev, Francesca Clemente, B. Sorée, Marleen H. van der Veen, Tom Vosch, A. Stesmans, Bert Sels, Stefan De Gendt

61 Citations (Scopus)

Abstract

The effects of thermal annealing in inert Ar gas atmosphere of SiO ₂-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage V_NP increases monotonically with the annealing temperature, confirming the ocurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.

Original language	English
Journal	Journal of Physical Chemistry C
Volume	114
Issue number	15
Pages (from-to)	6894-6900
Number of pages	7
ISSN	1932-7447
DOIs	https://doi.org/10.1021/jp910085n
Publication status	Published - 22 Apr 2010

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title = "Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing",

abstract = "The effects of thermal annealing in inert Ar gas atmosphere of SiO 2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the ocurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.",

author = "Amirhasan Nourbakhsh and Mirco Cantoro and A. Klekachev and Francesca Clemente and B. Sor{\'e}e and {van der Veen}, {Marleen H.} and Tom Vosch and A. Stesmans and Bert Sels and {De Gendt}, Stefan",

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doi = "10.1021/jp910085n",

language = "English",

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TY - JOUR

T1 - Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

AU - Nourbakhsh, Amirhasan

AU - Cantoro, Mirco

AU - Klekachev, A.

AU - Clemente, Francesca

AU - Sorée, B.

AU - van der Veen, Marleen H.

AU - Vosch, Tom

AU - Stesmans, A.

AU - Sels, Bert

AU - De Gendt, Stefan

PY - 2010/4/22

Y1 - 2010/4/22

N2 - The effects of thermal annealing in inert Ar gas atmosphere of SiO 2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the ocurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.

AB - The effects of thermal annealing in inert Ar gas atmosphere of SiO 2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the ocurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.

U2 - 10.1021/jp910085n

DO - 10.1021/jp910085n

M3 - Journal article

SN - 1932-7447

VL - 114

SP - 6894

EP - 6900

JO - The Journal of Physical Chemistry Part C

JF - The Journal of Physical Chemistry Part C

IS - 15

ER -

Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing

Abstract

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