TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

P. G. Karlsson; J. H. Richter; Martin Peter Andersson; M. K.-J. Jahansson; J. Blomquist; P. Uvdal; A. Sandell

TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

P. G. Karlsson, J. H. Richter, Martin Peter Andersson, M. K.-J. Jahansson, J. Blomquist, P. Uvdal, A. Sandell

Department of Chemistry

2 Citations (Scopus)

Original language	English
Journal	Surface Science
Volume	605
Pages (from-to)	1147-1156
ISSN	0039-6028
Publication status	Published - 2011

Cite this

@article{abee970b24f34397b4349847afcbada3,

title = "TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime",

author = "Karlsson, {P. G.} and Richter, {J. H.} and Andersson, {Martin Peter} and Jahansson, {M. K.-J.} and J. Blomquist and P. Uvdal and A. Sandell",

year = "2011",

language = "English",

volume = "605",

pages = "1147--1156",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV * North-Holland",

}

TY - JOUR

T1 - TiO2 chemical vapor deposition on Si(111) in ultrahigh vacuum: Transition from interfacial phase to crystalline phase in the reaction limited regime

AU - Karlsson, P. G.

AU - Richter, J. H.

AU - Andersson, Martin Peter

AU - Jahansson, M. K.-J.

AU - Blomquist, J.

AU - Uvdal, P.

AU - Sandell, A.

PY - 2011

Y1 - 2011

M3 - Journal article

SN - 0039-6028

VL - 605

SP - 1147

EP - 1156

JO - Surface Science

JF - Surface Science

ER -