The response of silicon detectors to low-energy ion implantation

T. Hopf, C. Yang, S. E. Andresen, D. Jamieson

6 Citations (Scopus)

Abstract

Udgivelsesdato: 15 Oct.

Original language	English
Journal	Journal of Physics: Condensed Matter
Volume	20
Issue number	41
Pages (from-to)	415205
ISSN	0953-8984
DOIs	https://doi.org/10.1088/0953-8984/20/41/415205
Publication status	Published - 2008

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title = "The response of silicon detectors to low-energy ion implantation",

abstract = "Udgivelsesdato: 15 Oct.",

author = "T. Hopf and C. Yang and Andresen, {S. E.} and D. Jamieson",

year = "2008",

doi = "10.1088/0953-8984/20/41/415205",

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TY - JOUR

T1 - The response of silicon detectors to low-energy ion implantation

AU - Hopf, T.

AU - Yang, C.

AU - Andresen, S. E.

AU - Jamieson, D.

PY - 2008

Y1 - 2008

N2 - Udgivelsesdato: 15 Oct.

AB - Udgivelsesdato: 15 Oct.

U2 - 10.1088/0953-8984/20/41/415205

DO - 10.1088/0953-8984/20/41/415205

M3 - Journal article

SN - 0953-8984

VL - 20

SP - 415205

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

IS - 41

ER -