Skip to main navigation
Skip to search
Skip to main content
University of Copenhagen Research Portal Home
Help & FAQ
Dansk
English
Home
Profiles
Research output
Research units
Press/Media
Activities
Prizes
???studenttheses???
Datasets
Search by expertise, name or affiliation
The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires
Lunjie Zeng,
Thomas Kanne
,
Jesper Nygard
,
Peter Krogstrup
, Wolfgang Jaeger, Eva Olsson
Condensed Matter Physics
5
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Bending Deformation
100%
P-type Doping
100%
Transport Effective Mass
100%
Electron Effective Mass
100%
Strain Band
20%
Charge Carrier Transport
20%
Strain Engineering
20%
Band Shift
20%
Strain Change
20%
In Situ Electron Microscopy
20%
Semiconductor Nanomaterials
20%
Engineering
Bending Deformation
100%
Doped Gaas
100%
Electron Effective Mass
100%
Engineering Strain
12%
Mechanical Strain
12%
Material Science
Gallium Arsenide
100%
Nanowire
100%
Energy Level
12%
Electron Energy Loss Spectrometry
12%
Crystal Structure
12%
Nanostructured Material
12%
Carrier Transport
12%
Charge Carrier
12%
Electron Microscopy
12%