Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

E. Russo-Averchi; M. Heiss; L. Michelet; Peter Krogstrup; Jesper Nygård; C. Magen; J.R. Morante; J. Arbiol; A.F. i Morral

doi:10.1039/c2nr11799a

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

E. Russo-Averchi, M. Heiss, L. Michelet, Peter Krogstrup, Jesper Nygård, C. Magen, J.R. Morante, J. Arbiol, A.F. i Morral

Condensed Matter Physics

Original language	English
Journal	Nanoscale
Volume	4
Pages (from-to)	1486-1490
ISSN	2040-3364
DOIs	https://doi.org/10.1039/c2nr11799a
Publication status	Published - 19 Jan 2012

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10.1039/c2nr11799a

Cite this

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title = "Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon",

author = "E. Russo-Averchi and M. Heiss and L. Michelet and Peter Krogstrup and Jesper Nyg{\aa}rd and C. Magen and J.R. Morante and J. Arbiol and {i Morral}, A.F.",

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AU - Russo-Averchi, E.

AU - Heiss, M.

AU - Michelet, L.

AU - Krogstrup, Peter

AU - Nygård, Jesper

AU - Magen, C.

AU - Morante, J.R.

AU - Arbiol, J.

AU - i Morral, A.F.

PY - 2012/1/19

Y1 - 2012/1/19

U2 - 10.1039/c2nr11799a

DO - 10.1039/c2nr11799a

M3 - Journal article

SN - 2040-3364

VL - 4

SP - 1486

EP - 1490

JO - Nanoscale

JF - Nanoscale

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