Structural phase control in self-catalyzed growth og GaAs nanowires on silicon (111)

TY - JOUR

T1 - Structural phase control in self-catalyzed growth og GaAs nanowires on silicon (111)

AU - Krogstrup, Peter

AU - Popovitz-Biro, R.

AU - Johnson, Erik

AU - Madsen, Morten Hannibal

AU - Nygård, Jesper

AU - Shtrikman, H.

PY - 2010/11/10

Y1 - 2010/11/10

N2 - Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.

AB - Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.

U2 - 10.1021/nl102308k

DO - 10.1021/nl102308k

M3 - Journal article

C2 - 20932012

SN - 1530-6984

VL - 10

SP - 4475

EP - 4482

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -