Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

S.E. Andresen; B.S. Sørensen; P.E. Lindelof; J. Sadowski; C.M. Guertler; J.A.C. Bland; Finn Berg Rasmussen

doi:10.1063/1.1602945

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

S.E. Andresen, B.S. Sørensen, P.E. Lindelof, J. Sadowski, C.M. Guertler, J.A.C. Bland, Finn Berg Rasmussen

Condensed Matter Physics

4 Citations (Scopus)

Abstract

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.

Original language	English
Journal	Journal of Applied Physics
Volume	94
Issue number	6
Pages (from-to)	3990-3994
Number of pages	5
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.1602945
Publication status	Published - 15 Sept 2003

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Faculty of Science

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10.1063/1.1602945

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abstract = "Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.",

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author = "S.E. Andresen and B.S. S{\o}rensen and P.E. Lindelof and J. Sadowski and C.M. Guertler and J.A.C. Bland and Rasmussen, {Finn Berg}",

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T1 - Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

AU - Andresen, S.E.

AU - Sørensen, B.S.

AU - Lindelof, P.E.

AU - Sadowski, J.

AU - Guertler, C.M.

AU - Bland, J.A.C.

AU - Rasmussen, Finn Berg

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.

AB - Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified by the strain-induced heavy-hole/light-hole splitting.

KW - Faculty of Science

KW - Nano electronics

UR - http://www.scopus.com/inward/record.url?scp=0141886914&partnerID=8YFLogxK

U2 - 10.1063/1.1602945

DO - 10.1063/1.1602945

M3 - Journal article

AN - SCOPUS:0141886914

SN - 0021-8979

VL - 94

SP - 3990

EP - 3994

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

Abstract

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