Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J. A. Beukman; Folkert K. De Vries; Jasper Van Veen; Rafal Skolasinski; Michael Wimmer; Fanming Qu; David T. De Vries; Binh-minh Nguyen; Wei Yi; Andrey A. Kiselev; Marko Sokolich; Michael J. Manfra; Fabrizio Nichele; Charles M. Marcus; Leo P. Kouwenhoven

doi:10.1103/PhysRevB.96.241401

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J. A. Beukman, Folkert K. De Vries, Jasper Van Veen, Rafal Skolasinski, Michael Wimmer, Fanming Qu, David T. De Vries, Binh-minh Nguyen, Wei Yi, Andrey A. Kiselev, Marko Sokolich, Michael J. Manfra, Fabrizio Nichele, Charles M. Marcus, Leo P. Kouwenhoven

Condensed Matter Physics

21 Citations (Scopus)

Abstract

The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

Original language	English
Article number	241401
Journal	Physical Review B
Volume	96
Issue number	24
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.96.241401
Publication status	Published - 1 Dec 2017

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title = "Spin-orbit interaction in a dual gated InAs/GaSb quantum well",

abstract = "The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV {\AA} and the Rashba coefficient α is tuned from 75 to 53 meV {\AA} by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.",

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T1 - Spin-orbit interaction in a dual gated InAs/GaSb quantum well

AU - Beukman, Arjan J. A.

AU - De Vries, Folkert K.

AU - Van Veen, Jasper

AU - Skolasinski, Rafal

AU - Wimmer, Michael

AU - Qu, Fanming

AU - De Vries, David T.

AU - Nguyen, Binh-minh

AU - Yi, Wei

AU - Kiselev, Andrey A.

AU - Sokolich, Marko

AU - Manfra, Michael J.

AU - Nichele, Fabrizio

AU - Marcus, Charles M.

AU - Kouwenhoven, Leo P.

N1 - [Qdev]

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

AB - The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

U2 - 10.1103/PhysRevB.96.241401

DO - 10.1103/PhysRevB.96.241401

M3 - Journal article

SN - 2469-9950

VL - 96

JO - Physical Review B

JF - Physical Review B

IS - 24

M1 - 241401

ER -

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Abstract

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