Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J. A. Beukman; Folkert K. De Vries; Jasper Van Veen; Rafal Skolasinski; Michael Wimmer; Fanming Qu; David T. De Vries; Binh-minh Nguyen; Wei Yi; Andrey A. Kiselev; Marko Sokolich; Michael J. Manfra; Fabrizio Nichele; Charles M. Marcus; Leo P. Kouwenhoven

doi:10.1103/PhysRevB.96.241401

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Arjan J. A. Beukman, Folkert K. De Vries, Jasper Van Veen, Rafal Skolasinski, Michael Wimmer, Fanming Qu, David T. De Vries, Binh-minh Nguyen, Wei Yi, Andrey A. Kiselev, Marko Sokolich, Michael J. Manfra, Fabrizio Nichele, Charles M. Marcus, Leo P. Kouwenhoven

Condensed Matter Physics

21 Citations (Scopus)

Abstract

The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

Original language	English
Article number	241401
Journal	Physical Review B
Volume	96
Issue number	24
ISSN	2469-9950
DOIs	https://doi.org/10.1103/PhysRevB.96.241401
Publication status	Published - 1 Dec 2017

Access to Document

10.1103/PhysRevB.96.241401

PhysRevB.96.241401Final published version, 1.82 MB

http://arxiv.org/pdf/1704.03482Licence: Other

Cite this

Beukman, A. J. A., De Vries, F. K., Van Veen, J., Skolasinski, R., Wimmer, M., Qu, F., De Vries, D. T., Nguyen, B., Yi, W., Kiselev, A. A., Sokolich, M., Manfra, M. J., Nichele, F., Marcus, C. M., & Kouwenhoven, L. P. (2017). Spin-orbit interaction in a dual gated InAs/GaSb quantum well. Physical Review B, 96(24), Article 241401. https://doi.org/10.1103/PhysRevB.96.241401

@article{492c40d4cf504bc78f26760e412facfe,

title = "Spin-orbit interaction in a dual gated InAs/GaSb quantum well",

abstract = "The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV {\AA} and the Rashba coefficient α is tuned from 75 to 53 meV {\AA} by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.",

author = "Beukman, {Arjan J. A.} and {De Vries}, {Folkert K.} and {Van Veen}, Jasper and Rafal Skolasinski and Michael Wimmer and Fanming Qu and {De Vries}, {David T.} and Binh-minh Nguyen and Wei Yi and Kiselev, {Andrey A.} and Marko Sokolich and Manfra, {Michael J.} and Fabrizio Nichele and Marcus, {Charles M.} and Kouwenhoven, {Leo P.}",

note = "[Qdev]",

year = "2017",

month = dec,

day = "1",

doi = "10.1103/PhysRevB.96.241401",

language = "English",

volume = "96",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Spin-orbit interaction in a dual gated InAs/GaSb quantum well

AU - Beukman, Arjan J. A.

AU - De Vries, Folkert K.

AU - Van Veen, Jasper

AU - Skolasinski, Rafal

AU - Wimmer, Michael

AU - Qu, Fanming

AU - De Vries, David T.

AU - Nguyen, Binh-minh

AU - Yi, Wei

AU - Kiselev, Andrey A.

AU - Sokolich, Marko

AU - Manfra, Michael J.

AU - Nichele, Fabrizio

AU - Marcus, Charles M.

AU - Kouwenhoven, Leo P.

N1 - [Qdev]

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

AB - The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by β=28.5 meV Å and the Rashba coefficient α is tuned from 75 to 53 meV Å by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.

U2 - 10.1103/PhysRevB.96.241401

DO - 10.1103/PhysRevB.96.241401

M3 - Journal article

SN - 2469-9950

VL - 96

JO - Physical Review B

JF - Physical Review B

IS - 24

M1 - 241401

ER -

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Abstract

Access to Document

Fingerprint

Cite this