Single-nanowire solar cells beyond the Shockley-Queisser limit

Peter Krogstrup; Henrik Ingerslev Jørgensen; Martin Heiss; Oliver Demichel; Jeppe Vilstrup Holm; Martin Aagesen; Jesper Nygård; Anna Fontcuberta i Morral

doi:10.1038/nphoton.2013.32

Single-nanowire solar cells beyond the Shockley-Queisser limit

Peter Krogstrup, Henrik Ingerslev Jørgensen, Martin Heiss, Oliver Demichel, Jeppe Vilstrup Holm, Martin Aagesen, Jesper Nygård, Anna Fontcuberta i Morral

Condensed Matter Physics

568 Citations (Scopus)

Abstract

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm^-2 is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.

Original language	English
Journal	Nature Photonics
Volume	7
Issue number	4
Pages (from-to)	306-310
Number of pages	5
ISSN	1749-4885
DOIs	https://doi.org/10.1038/nphoton.2013.32
Publication status	Published - Apr 2013

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abstract = "Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm-2 is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.",

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AU - Krogstrup, Peter

AU - Jørgensen, Henrik Ingerslev

AU - Heiss, Martin

AU - Demichel, Oliver

AU - Holm, Jeppe Vilstrup

AU - Aagesen, Martin

AU - Nygård, Jesper

AU - Fontcuberta i Morral, Anna

PY - 2013/4

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N2 - Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm-2 is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.

AB - Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm-2 is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.

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Single-nanowire solar cells beyond the Shockley-Queisser limit

Abstract

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