Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

S. J. MacLeod; A. M. See; Z. K. Keane; P. Scriven; A. P. Micolich; M. Aagesen; P. E. Lindelof; A. R. Hamilton

doi:10.1063/1.4858958

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

S. J. MacLeod, A. M. See, Z. K. Keane, P. Scriven, A. P. Micolich, M. Aagesen, P. E. Lindelof, A. R. Hamilton

Condensed Matter Physics

6 Citations (Scopus)

Abstract

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

Original language	English
Article number	012114
Journal	Applied Physics Letters
Volume	104
Issue number	1
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4858958
Publication status	Published - 6 Jan 2014

Access to Document

10.1063/1.4858958

Cite this

@article{bc86f1da39f7411eadaf74f103c2274b,

title = "Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor",

abstract = "Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.",

author = "MacLeod, {S. J.} and See, {A. M.} and Keane, {Z. K.} and P. Scriven and Micolich, {A. P.} and M. Aagesen and Lindelof, {P. E.} and Hamilton, {A. R.}",

year = "2014",

month = jan,

day = "6",

doi = "10.1063/1.4858958",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

AU - MacLeod, S. J.

AU - See, A. M.

AU - Keane, Z. K.

AU - Scriven, P.

AU - Micolich, A. P.

AU - Aagesen, M.

AU - Lindelof, P. E.

AU - Hamilton, A. R.

PY - 2014/1/6

Y1 - 2014/1/6

N2 - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

AB - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

U2 - 10.1063/1.4858958

DO - 10.1063/1.4858958

M3 - Journal article

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012114

ER -