Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth

A. Kristensen; C.B. Soerensen; P.E. Lindelof; J. Bo Jensen; J. Nygård; M. Zaffalon; F. Beuscher; M.C. Michel; A. Forchel

doi:doi:10.1016/S0038-1101(97)00310-9

Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth

A. Kristensen, C.B. Soerensen, P.E. Lindelof, J. Bo Jensen, J. Nygård, M. Zaffalon, F. Beuscher, M.C. Michel, A. Forchel

Abstract

Udgivelsesdato: 8 juli 1998

Original language	English
Journal	Solid-State Electronics
Volume	42
Issue number	7-8
Pages (from-to)	1103-1107
Number of pages	5
ISSN	0038-1101
DOIs	https://doi.org/doi:10.1016/S0038-1101(97)00310-9
Publication status	Published - 1998

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doi:10.1016/S0038-1101(97)00310-9

Cite this

@article{981a23a074c911dbbee902004c4f4f50,

title = "Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth",

abstract = "Udgivelsesdato: 8 juli 1998",

author = "A. Kristensen and C.B. Soerensen and P.E. Lindelof and {Bo Jensen}, J. and J. Nyg{\aa}rd and M. Zaffalon and F. Beuscher and M.C. Michel and A. Forchel",

note = "{\O}rsted Laboratoriet, Niels Bohr Institutet",

year = "1998",

doi = "doi:10.1016/S0038-1101(97)00310-9",

language = "English",

volume = "42",

pages = "1103--1107",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth

AU - Kristensen, A.

AU - Soerensen, C.B.

AU - Lindelof, P.E.

AU - Bo Jensen, J.

AU - Nygård, J.

AU - Zaffalon, M.

AU - Beuscher, F.

AU - Michel, M.C.

AU - Forchel, A.

N1 - Ørsted Laboratoriet, Niels Bohr Institutet

PY - 1998

Y1 - 1998

N2 - Udgivelsesdato: 8 juli 1998

AB - Udgivelsesdato: 8 juli 1998

U2 - doi:10.1016/S0038-1101(97)00310-9

DO - doi:10.1016/S0038-1101(97)00310-9

M3 - Journal article

SN - 0038-1101

VL - 42

SP - 1103

EP - 1107

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7-8

ER -