Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells

V.Ya. Aleshkin..[et al.]; L.V. Gavrilenko; D.M. Gaponova; Claus Birger Sørensen

doi:10.1134/s0021364011070022

Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells

V.Ya. Aleshkin..[et al.], L.V. Gavrilenko, D.M. Gaponova, Claus Birger Sørensen

Abstract

Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.

Original language	English
Journal	J E T P Letters
Volume	93
Issue number	7
Pages (from-to)	394-398
ISSN	0021-3640
DOIs	https://doi.org/10.1134/s0021364011070022
Publication status	Published - 1 Jun 2011

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title = "Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells",

abstract = "Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.",

author = "{Aleshkin..[et al.]}, V.Ya. and L.V. Gavrilenko and D.M. Gaponova and S{\o}rensen, {Claus Birger}",

year = "2011",

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doi = "10.1134/s0021364011070022",

language = "English",

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T1 - Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells

AU - Aleshkin..[et al.], V.Ya.

AU - Gavrilenko, L.V.

AU - Gaponova, D.M.

AU - Sørensen, Claus Birger

PY - 2011/6/1

Y1 - 2011/6/1

N2 - Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.

AB - Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.

U2 - 10.1134/s0021364011070022

DO - 10.1134/s0021364011070022

M3 - Journal article

SN - 0021-3640

VL - 93

SP - 394

EP - 398

JO - JETP Letters

JF - JETP Letters

IS - 7

ER -

Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells

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