Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

Amirhasan Nourbakhsh; Mirco Cantoro; Afshin Hadipour; Tom Vosch; Marleen H. van der Veen; Marc M. Heyns; Bert F.  Sels; Stefan De Gendt

doi:10.1063/1.3495777

Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

Amirhasan Nourbakhsh, Mirco Cantoro, Afshin Hadipour, Tom Vosch, Marleen H. van der Veen, Marc M. Heyns, Bert F. Sels, Stefan De Gendt

24 Citations (Scopus)

Abstract

In this paper, we report the fabrication and characterization of Schottky rectifying junctions between semiconducting, modified single-layer graphene and a metal. The pristine, semimetallic behavior of graphene is altered by controlled exposure to an oxygen plasma, resulting in the opening of an optical band gap as shown by photoluminescence spectroscopy. The occurrence of a Schottky barrier between semiconducting graphene and metals with different work functions (Al, Cr, Pd, and Yb) is investigated by electrically characterizing the as-fabricated junctions. The rectifying properties of our Schottky diodes show the potential of semiconducting, modified graphene as building block of elementary logic circuits.

Original language	English
Journal	Applied Physics Letters
Volume	97
Issue number	16
Pages (from-to)	163101
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3495777
Publication status	Published - 18 Oct 2010

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http://apl.aip.org/resource/1/applab/v97/i16/p163101_s1

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title = "Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode",

abstract = "In this paper, we report the fabrication and characterization of Schottky rectifying junctions between semiconducting, modified single-layer graphene and a metal. The pristine, semimetallic behavior of graphene is altered by controlled exposure to an oxygen plasma, resulting in the opening of an optical band gap as shown by photoluminescence spectroscopy. The occurrence of a Schottky barrier between semiconducting graphene and metals with different work functions (Al, Cr, Pd, and Yb) is investigated by electrically characterizing the as-fabricated junctions. The rectifying properties of our Schottky diodes show the potential of semiconducting, modified graphene as building block of elementary logic circuits.",

author = "Amirhasan Nourbakhsh and Mirco Cantoro and Afshin Hadipour and Tom Vosch and {van der Veen}, {Marleen H.} and Heyns, {Marc M.} and Sels, {Bert F.} and {De Gendt}, Stefan",

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T1 - Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

AU - Nourbakhsh, Amirhasan

AU - Cantoro, Mirco

AU - Hadipour, Afshin

AU - Vosch, Tom

AU - van der Veen, Marleen H.

AU - Heyns, Marc M.

AU - Sels, Bert F.

AU - De Gendt, Stefan

PY - 2010/10/18

Y1 - 2010/10/18

N2 - In this paper, we report the fabrication and characterization of Schottky rectifying junctions between semiconducting, modified single-layer graphene and a metal. The pristine, semimetallic behavior of graphene is altered by controlled exposure to an oxygen plasma, resulting in the opening of an optical band gap as shown by photoluminescence spectroscopy. The occurrence of a Schottky barrier between semiconducting graphene and metals with different work functions (Al, Cr, Pd, and Yb) is investigated by electrically characterizing the as-fabricated junctions. The rectifying properties of our Schottky diodes show the potential of semiconducting, modified graphene as building block of elementary logic circuits.

AB - In this paper, we report the fabrication and characterization of Schottky rectifying junctions between semiconducting, modified single-layer graphene and a metal. The pristine, semimetallic behavior of graphene is altered by controlled exposure to an oxygen plasma, resulting in the opening of an optical band gap as shown by photoluminescence spectroscopy. The occurrence of a Schottky barrier between semiconducting graphene and metals with different work functions (Al, Cr, Pd, and Yb) is investigated by electrically characterizing the as-fabricated junctions. The rectifying properties of our Schottky diodes show the potential of semiconducting, modified graphene as building block of elementary logic circuits.

U2 - 10.1063/1.3495777

DO - 10.1063/1.3495777

M3 - Journal article

SN - 0003-6951

VL - 97

SP - 163101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

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