Low temperature electrical and photo-responsive properties of MoSe2

Chao Fan; Qu Yue; Juehan Yang; Zhongming Wei; Shengxue Yang; Jingbo Li

doi:10.1063/1.4878837

Low temperature electrical and photo-responsive properties of MoSe₂

Chao Fan, Qu Yue, Juehan Yang, Zhongming Wei, Shengxue Yang, Jingbo Li

Department of Chemistry

16 Citations (Scopus)

Abstract

MoSe₂ was fabricated by a facile hydrothermal method, and a simple device based on it was prepared to investigate the low temperature electrical and photo-responsive (PR) properties. PR current of MoSe₂ under 650 nm red illumination is 2.55 × 10⁻⁵ A and remains approximately at low temperatures, which demonstrates its fine PR property. As the temperature became lower, electrical conductivity of MoSe₂ first decreased from 300 to 43 K and then increased at temperatures from 43 to 13 K. Mechanisms of such electrical and PR phenomenon were proposed. Our findings revealed potential method to adjust band gap of transition metal dichalcogenides and demonstrated their potential applications under special environment.

Original language	English
Article number	202105
Journal	Applied Physics Letters
Volume	104
Issue number	20
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4878837
Publication status	Published - 19 May 2014

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10.1063/1.4878837

Cite this

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abstract = "MoSe2 was fabricated by a facile hydrothermal method, and a simple device based on it was prepared to investigate the low temperature electrical and photo-responsive (PR) properties. PR current of MoSe2 under 650 nm red illumination is 2.55 × 10−5 A and remains approximately at low temperatures, which demonstrates its fine PR property. As the temperature became lower, electrical conductivity of MoSe2 first decreased from 300 to 43 K and then increased at temperatures from 43 to 13 K. Mechanisms of such electrical and PR phenomenon were proposed. Our findings revealed potential method to adjust band gap of transition metal dichalcogenides and demonstrated their potential applications under special environment.",

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AU - Fan, Chao

AU - Yue, Qu

AU - Yang, Juehan

AU - Wei, Zhongming

AU - Yang, Shengxue

AU - Li, Jingbo

PY - 2014/5/19

Y1 - 2014/5/19

N2 - MoSe2 was fabricated by a facile hydrothermal method, and a simple device based on it was prepared to investigate the low temperature electrical and photo-responsive (PR) properties. PR current of MoSe2 under 650 nm red illumination is 2.55 × 10−5 A and remains approximately at low temperatures, which demonstrates its fine PR property. As the temperature became lower, electrical conductivity of MoSe2 first decreased from 300 to 43 K and then increased at temperatures from 43 to 13 K. Mechanisms of such electrical and PR phenomenon were proposed. Our findings revealed potential method to adjust band gap of transition metal dichalcogenides and demonstrated their potential applications under special environment.

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