Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

B. Shjaei; A.C.C. Drachmann; M. Pendharkar; D.J. Pennachio; M.P. Echlin; P.G. Gallahan; S. Kraemer; T.M. Pollock; Charles M. Marcus; C J Palmstrøm

doi:10.1103/physrevb.94.245306

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

B. Shjaei, A.C.C. Drachmann, M. Pendharkar, D.J. Pennachio, M.P. Echlin, P.G. Gallahan, S. Kraemer, T.M. Pollock, Charles M. Marcus, C J Palmstrøm

Condensed Matter Physics

11 Citations (Scopus)

Abstract

The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.

Original language	English
Article number	245306
Journal	Physical Review B
Volume	94
ISSN	2469-9950
DOIs	https://doi.org/10.1103/physrevb.94.245306
Publication status	Published - 14 Dec 2016

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title = "Limits to mobility in InAs quantum wells with nearly lattice-matched barriers",

abstract = "The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.",

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T1 - Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

AU - Shjaei, B.

AU - Drachmann, A.C.C.

AU - Pendharkar, M.

AU - Pennachio, D.J.

AU - Echlin, M.P.

AU - Gallahan, P.G.

AU - Kraemer, S.

AU - Pollock, T.M.

AU - Marcus, Charles M.

AU - Palmstrøm, C J

N1 - [Qdev]

PY - 2016/12/14

Y1 - 2016/12/14

N2 - The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.

AB - The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with Al1-xGaxSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750000cm2V-1s-1 was achieved at a sample temperature of 2 K.

U2 - 10.1103/physrevb.94.245306

DO - 10.1103/physrevb.94.245306

M3 - Journal article

SN - 2469-9950

VL - 94

JO - Physical Review B

JF - Physical Review B

M1 - 245306

ER -

Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Abstract

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