InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

Mathieu Taupin; Elsa Mannila; Peter Krogstrup; Quoc Hung Nguyen; Sven Marian Albrecht; Jesper Nygård; Charles M. Marcus; Jukka P. Pekola

doi:10.1103/PhysRevApplied.6.054017

InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

Mathieu Taupin, Elsa Mannila, Peter Krogstrup, Quoc Hung Nguyen, Sven Marian Albrecht, Jesper Nygård, Charles M. Marcus, Jukka P. Pekola

Condensed Matter Physics

11 Citations (Scopus)

Abstract

We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

Original language	English
Article number	054017
Journal	Physical Review Applied
Volume	6
Number of pages	7
ISSN	2331-7019
DOIs	https://doi.org/10.1103/PhysRevApplied.6.054017
Publication status	Published - 28 Nov 2016

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title = "InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers",

abstract = "We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.",

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AU - Taupin, Mathieu

AU - Mannila, Elsa

AU - Krogstrup, Peter

AU - Nguyen, Quoc Hung

AU - Albrecht, Sven Marian

AU - Nygård, Jesper

AU - Marcus, Charles M.

AU - Pekola, Jukka P.

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N2 - We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

AB - We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

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JO - Physical Review Applied

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InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

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