Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO

Juehan Yang; Nengjie Huo; Yan Li; Xiang-Wei Jiang; Tao Li; Renxiong Li; Fangyuan Lu; Chao Fan; Bo Li; Kasper Nørgaard; Bo Wegge Laursen; Zhongming Wei; Jingbo Li; Shu-Shen Li

doi:10.1002/aelm.201500267

Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS₂ and solution-processed rGO

Juehan Yang, Nengjie Huo, Yan Li, Xiang-Wei Jiang, Tao Li, Renxiong Li, Fangyuan Lu, Chao Fan, Bo Li, Kasper Nørgaard, Bo Wegge Laursen, Zhongming Wei, Jingbo Li, Shu-Shen Li

26 Citations (Scopus)

Original language	English
Article number	1500267
Journal	Advanced Electronic Materials
Volume	1
Issue number	10
Number of pages	8
ISSN	2199-160X
DOIs	https://doi.org/10.1002/aelm.201500267
Publication status	Published - Oct 2015

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10.1002/aelm.201500267

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@article{56f3fac723db497893eddf7f9c82e39f,

title = "Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO",

author = "Juehan Yang and Nengjie Huo and Yan Li and Xiang-Wei Jiang and Tao Li and Renxiong Li and Fangyuan Lu and Chao Fan and Bo Li and Kasper N{\o}rgaard and Laursen, {Bo Wegge} and Zhongming Wei and Jingbo Li and Shu-Shen Li",

year = "2015",

month = oct,

doi = "10.1002/aelm.201500267",

language = "English",

volume = "1",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH",

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TY - JOUR

T1 - Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO

AU - Yang, Juehan

AU - Huo, Nengjie

AU - Li, Yan

AU - Jiang, Xiang-Wei

AU - Li, Tao

AU - Li, Renxiong

AU - Lu, Fangyuan

AU - Fan, Chao

AU - Li, Bo

AU - Nørgaard, Kasper

AU - Laursen, Bo Wegge

AU - Wei, Zhongming

AU - Li, Jingbo

AU - Li, Shu-Shen

PY - 2015/10

Y1 - 2015/10

U2 - 10.1002/aelm.201500267

DO - 10.1002/aelm.201500267

M3 - Journal article

SN - 2199-160X

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 10

M1 - 1500267

ER -

Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS2 and solution-processed rGO

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Cite this

Gate-tunable ultrahigh photoresponsivity of 2D heterostructures based on few layer MoS₂ and solution-processed rGO