Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

Wei Yi; Andrey A. Kiselev; Jacob Thorp; Ramsey Noah; Binh-Minh Nguyen; Steven Bui; Rajesh D. Rajavel; Tahir Hussain; Mark F. Gyure; Philip Kratz; Qi Qian; Michael J. Manfra; Vlad S. Pribiag; Leo P. Kouwenhoven; Charles M. Marcus; Marko Sokolich

doi:10.1063/1.4917027

Gate-tunable high mobility remote-doped InSb/In_1-xAl_xSb quantum well heterostructures

Wei Yi, Andrey A. Kiselev, Jacob Thorp, Ramsey Noah, Binh-Minh Nguyen, Steven Bui, Rajesh D. Rajavel, Tahir Hussain, Mark F. Gyure, Philip Kratz, Qi Qian, Michael J. Manfra, Vlad S. Pribiag, Leo P. Kouwenhoven, Charles M. Marcus, Marko Sokolich

Condensed Matter Physics

22 Citations (Scopus)

Original language	English
Article number	142103
Journal	Applied Physics Letters
Volume	106
Issue number	14
Number of pages	5
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4917027
Publication status	Published - 6 Apr 2015

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Yi, W., Kiselev, A. A., Thorp, J., Noah, R., Nguyen, B-M., Bui, S., Rajavel, R. D., Hussain, T., Gyure, M. F., Kratz, P., Qian, Q., Manfra, M. J., Pribiag, V. S., Kouwenhoven, L. P., Marcus, C. M., & Sokolich, M. (2015). Gate-tunable high mobility remote-doped InSb/In_1-xAl_xSb quantum well heterostructures. Applied Physics Letters, 106(14), [142103]. https://doi.org/10.1063/1.4917027

@article{072553c826744f708136fe43abd40840,

title = "Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures",

author = "Wei Yi and Kiselev, {Andrey A.} and Jacob Thorp and Ramsey Noah and Binh-Minh Nguyen and Steven Bui and Rajavel, {Rajesh D.} and Tahir Hussain and Gyure, {Mark F.} and Philip Kratz and Qi Qian and Manfra, {Michael J.} and Pribiag, {Vlad S.} and Kouwenhoven, {Leo P.} and Marcus, {Charles M.} and Marko Sokolich",

note = "[QDev]",

year = "2015",

month = apr,

day = "6",

doi = "10.1063/1.4917027",

language = "English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

AU - Yi, Wei

AU - Kiselev, Andrey A.

AU - Thorp, Jacob

AU - Noah, Ramsey

AU - Nguyen, Binh-Minh

AU - Bui, Steven

AU - Rajavel, Rajesh D.

AU - Hussain, Tahir

AU - Gyure, Mark F.

AU - Kratz, Philip

AU - Qian, Qi

AU - Manfra, Michael J.

AU - Pribiag, Vlad S.

AU - Kouwenhoven, Leo P.

AU - Marcus, Charles M.

AU - Sokolich, Marko

N1 - [QDev]

PY - 2015/4/6

Y1 - 2015/4/6

U2 - 10.1063/1.4917027

DO - 10.1063/1.4917027

M3 - Journal article

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures

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Gate-tunable high mobility remote-doped InSb/In_1-xAl_xSb quantum well heterostructures