Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

TY - JOUR

T1 - Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

AU - Volk, Christian

AU - Chatterjee, Anasua

AU - Ansaloni, Fabio

AU - Marcus, Charles M.

AU - Kuemmeth, Ferdinand

N1 - - Marie Skłodowska-Curie Actions - Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108 - Publication date: “24. July 2019 - Embargo period: 12 months - Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149 - This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539

PY - 2019/8/14

Y1 - 2019/8/14

N2 - Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.

AB - Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.

U2 - 10.1021/acs.nanolett.9b02149

DO - 10.1021/acs.nanolett.9b02149

M3 - Letter

C2 - 31339321

SN - 1530-6984

VL - 19

SP - 5628

EP - 5633

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -