Experimental determination of adatom diffusion lengths for growth of InAs nanowires

Morten Hannibal Madsen; Peter Krogstrup; Erik Johnson; Sriam Venkatesan; Erika Mühlbauer; Christina Scheu; Claus Birger Sørensen; Jesper Nygård

doi:10.1016/j.jcrysgro.2012.12.001

Experimental determination of adatom diffusion lengths for growth of InAs nanowires

Morten Hannibal Madsen, Peter Krogstrup, Erik Johnson, Sriam Venkatesan, Erika Mühlbauer, Christina Scheu, Claus Birger Sørensen, Jesper Nygård

30 Citations (Scopus)

Abstract

Au-assisted InAs nanowires are grown using molecular beam epitaxy. By tailoring the growth and position of InAs nanowires, experimental values for the effective diffusion lengths of adatoms on both the substrate and nanowire sidewalls have been deduced. In the framework of a mass continuity growth model for group III elements, based on a simple kinetic but informative treatment without use of thermodynamic parameters, both shadowing effects and shared substrate diffusion areas are included. The growth model is fitted to two types of data, one for nanowires positioned in a quadratic array with varying pitch, and one for nanowires with axial heterostructures. For the given growth conditions the effective diffusion length for In adatoms on InAs NW sidewalls with wurtzite crystal structure is found to be 3 μm, whereas the effective diffusion of Ga adatoms is an order of magnitude smaller. The minimum pitch to ensure independent growth, without influence from nearby NWs, is found to be around 2 μm.

Original language	English
Journal	Journal of Crystal Growth
Volume	364
Pages (from-to)	16-22
Number of pages	7
ISSN	0022-0248
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.12.001
Publication status	Published - 2013

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10.1016/j.jcrysgro.2012.12.001

http://dx.doi.org/10.1016/j.jcrysgro.2012.12.001

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title = "Experimental determination of adatom diffusion lengths for growth of InAs nanowires",

abstract = "Au-assisted InAs nanowires are grown using molecular beam epitaxy. By tailoring the growth and position of InAs nanowires, experimental values for the effective diffusion lengths of adatoms on both the substrate and nanowire sidewalls have been deduced. In the framework of a mass continuity growth model for group III elements, based on a simple kinetic but informative treatment without use of thermodynamic parameters, both shadowing effects and shared substrate diffusion areas are included. The growth model is fitted to two types of data, one for nanowires positioned in a quadratic array with varying pitch, and one for nanowires with axial heterostructures. For the given growth conditions the effective diffusion length for In adatoms on InAs NW sidewalls with wurtzite crystal structure is found to be 3 μm, whereas the effective diffusion of Ga adatoms is an order of magnitude smaller. The minimum pitch to ensure independent growth, without influence from nearby NWs, is found to be around 2 μm.",

author = "Madsen, {Morten Hannibal} and Peter Krogstrup and Erik Johnson and Sriam Venkatesan and Erika M{\"u}hlbauer and Christina Scheu and S{\o}rensen, {Claus Birger} and Jesper Nyg{\aa}rd",

year = "2013",

doi = "10.1016/j.jcrysgro.2012.12.001",

language = "English",

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pages = "16--22",

journal = "Journal of Crystal Growth",

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T1 - Experimental determination of adatom diffusion lengths for growth of InAs nanowires

AU - Madsen, Morten Hannibal

AU - Krogstrup, Peter

AU - Johnson, Erik

AU - Venkatesan, Sriam

AU - Mühlbauer, Erika

AU - Scheu, Christina

AU - Sørensen, Claus Birger

AU - Nygård, Jesper

PY - 2013

Y1 - 2013

N2 - Au-assisted InAs nanowires are grown using molecular beam epitaxy. By tailoring the growth and position of InAs nanowires, experimental values for the effective diffusion lengths of adatoms on both the substrate and nanowire sidewalls have been deduced. In the framework of a mass continuity growth model for group III elements, based on a simple kinetic but informative treatment without use of thermodynamic parameters, both shadowing effects and shared substrate diffusion areas are included. The growth model is fitted to two types of data, one for nanowires positioned in a quadratic array with varying pitch, and one for nanowires with axial heterostructures. For the given growth conditions the effective diffusion length for In adatoms on InAs NW sidewalls with wurtzite crystal structure is found to be 3 μm, whereas the effective diffusion of Ga adatoms is an order of magnitude smaller. The minimum pitch to ensure independent growth, without influence from nearby NWs, is found to be around 2 μm.

AB - Au-assisted InAs nanowires are grown using molecular beam epitaxy. By tailoring the growth and position of InAs nanowires, experimental values for the effective diffusion lengths of adatoms on both the substrate and nanowire sidewalls have been deduced. In the framework of a mass continuity growth model for group III elements, based on a simple kinetic but informative treatment without use of thermodynamic parameters, both shadowing effects and shared substrate diffusion areas are included. The growth model is fitted to two types of data, one for nanowires positioned in a quadratic array with varying pitch, and one for nanowires with axial heterostructures. For the given growth conditions the effective diffusion length for In adatoms on InAs NW sidewalls with wurtzite crystal structure is found to be 3 μm, whereas the effective diffusion of Ga adatoms is an order of magnitude smaller. The minimum pitch to ensure independent growth, without influence from nearby NWs, is found to be around 2 μm.

U2 - 10.1016/j.jcrysgro.2012.12.001

DO - 10.1016/j.jcrysgro.2012.12.001

M3 - Journal article

SN - 0022-0248

VL - 364

SP - 16

EP - 22

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Experimental determination of adatom diffusion lengths for growth of InAs nanowires

Abstract

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